Nitride semiconductor device

ABSTRACT

A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type contact layer where an n-electrode is formed is sandwiched between undoped nitride semiconductor layers; or a superlattice structure of nitride. The n-type contact layer has a carrier concentration exceeding 3×10 10  cm 3 , and the resistivity can be lowered below 8×10 −3  Ωcm.

CROSS-REFERENCES TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.12/068,063, filed Feb. 1, 2008, which will issue as U.S. Pat. No.8,592,841 on Nov. 26, 2013, which is a divisional of U.S. applicationSer. No. 09/463,643, filed May 1, 2000, now U.S. Pat. No. 7,365,369,issued Apr. 29, 2008, which is the U.S. national phase of internationalapplication PCT/JP98/03336 filed Jul. 27, 1998, now WO9905728, issuedFeb. 4, 2009, which designated the US. PCT/JP98/03336 claims priority toJP Application Nos. 9-199471, filed Jul. 25, 1997; 9-235524, filed Sep.1, 1997; 9-286304, filed Oct. 20, 1997; 9-304328, filed Nov. 6, 1997;9-317421, filed Nov. 18, 1997; 9-348972, filed Dec. 18, 1997; 9-348973,filed Dec. 18, 1997; 10-176623, filed Jun. 8, 1998; 10-176634, filedJun. 8, 1998; and 10-199829, filed Jun. 29, 1998, the entire contents ofthese applications are incorporated herein by reference.

TECHNICAL FIELD OF THE INVENTION

This invention relates to a device provided with a nitride semiconductor(In_(X)Al_(Y)Ga_(1-X-Y)N, 0≦X, 0≦Y, X+Y≦1) including light emittingdevices such as LED (light emitting diode) and LD (laser diode), solarcells, light receiving devices such as optical sensors and electronicdevices such as transistors and power devices.

BACKGROUND OF THE INVENTION

Nitride semiconductors have been recently produced as materials used fora high bright pure green LED and a blue LED in various light sources fora full color LED display, a traffic signal and an image scanner and thelike. These LEDs basically have such a stricture that a buffer layer, an-side contact layer made of Si-doped GaN, an active layer of SQW(Single Quantum Well) made of InGaN or MQW (Multi Quantum Well)including InGaN, a p-side cladding layer made of Mg-doped AlGaN and ap-side contact layer made of Mg-doped GaN are laminated sequentially onthe sapphire substrate. Such LEDs show excellent properties and forexample, at 20 mA, for blue LED having a light emitting wavelength of450 nm, 5 mW of output and 9.1% of an external quantum efficiency can beachieved and for green LED having a light emitting wavelength of 520 nm,3 mW of output and 6.3% of an external quantum efficiency can beachieved.

The inventors have first realized laser emitting of 410 nm at roomtemperature by using the above nitride materials and reported it in Jpn.J. Appl. Phys. 35 (1996) L74 and Jpn. J. Appl. Phys. 35 (1996) L217. Thelaser device comprises the DH structure where the active layer is MOWhaving InGaN well layers and showed the following data:

Threshold current: 610 mA;

Threshold current density: 8.7 kA/m2;

Wavelength: 410 nm;

(pulse width 2 μm and pulse cycle 2 ms)

The inventors have first succeeded in CW (Continuous-Wave) Oscillationor Operation at room temperature and reported it in Gijutsu-Sokuho ofNikkei Electronics issued on Dec. 2, 1996, Appl. Phys. Lett. 69 (1996)and Appl. Phys. Lett, 69 (1996) 4056.

The laser diode showed a lifetime of 27 hours at 20° C. under thethreshold current density of 3.6 kA/cm², the threshold voltage of 5.5 Vand the output of 1.5 mW.

Thus, nitride semiconductors have been produced as materials for a LED.And for a LD, continuous-wave oscillation or operation of as long as afew tens hours can be achieved. However, a further enhancement of theoutput is required in order to use LEDs for illumination lights, outdoordisplays exposed to the direct rays of the sun and the like. And it isnecessary to improve LDs, in order to decrease the threshold in LDs andrealize a longer lifetime of the LDs and to use the LDs in light sourcessuch as the light-pick-up, DVD and the like. Said LD showed a forwardcurrent of 20 mA and a forward voltage (Vf) of near 3.6V. Furtherdecrease of Vf leads to decrease of generation of heat in the device,resulting in increase of reliability. It is extremely important todecrease the threshold voltage in the laser devices to realize a longerlifetime of the devices.

In view of such circumstances, this invention has been accomplished. Themain object of the present invention is to enhance the output of thenitride semiconductor devices such as LED and LD and to decrease Vf andthe threshold voltage thereof, resulting in the enhancement of thereliability of the devices. Particularly, the first object of thepresent invention is to increase the carrier concentration in the n-typecontact layer and decrease the resistivity thereof.

Further, the second object of the present invention is to provide ann-type nitride layer structure in which the carrier concentration in then-type contact layer is increased and the crystallinity of the nitridesemiconductor layer formed on the n-type contact layer can be enhanced.

DISCLOSURE OF THE INVENTION

According to the present invention, there is provided a nitridesemiconductor device comprising an above-mentioned n-type contact layerin a specific three-layer laminated structure or a super latticestructure.

According to a first aspect of the present invention, there is provideda nitride semiconductor device, which is a light emitting device,comprising at least a substrate an n-type contact layer forming ann-electrode, an active layer where electrons and holes are recombinedand a p-type contact layer forming a p-electrode, each layer being madeof nitride semiconductor, wherein the n-type contact layer is made of anitride semiconductor doped with an n-type impurity and has a firstsurface and a second surface, and undoped nitride semiconductor layersare formed close to the first and second surfaces, respectively,resulting in the three-layer laminated structure of the n-type contactlayer.

In this case, an undoped nitride semiconductor layer means anintentionally not doped layer and includes a nitride semiconductor layerwhich may contain an impurity originally contained in the raw material,unintentionally introduced by the contamination within the reactor andby diffusion from the other layers which is intentionally doped with animpurity, and also a layer which is considered to be a substantiallyundoped layer because of doping in a very small amount (for example,resistivity of 3×10⁻¹ Ω·cm or more). An n-type impurity includes GroupIV elements such as Si, Ge, Sn and the like and Si is preferred. Thenitride semiconductor layers which are laminated therewith, includingthe n-type contact layer may be made of for example, GaN, InGaN andAlGaN and preferably, the n-type contact layer may be made of GaNincluding no In or Al in the term of the crystallinity. While theundoped nitride semiconductor layers which are formed on the both sidesof the n-type contact layer will be described below in detail. In thecase that the n-type contact layer is the second layer of thethree-layer laminated structure, the first nitride semiconductor layerformed on the substrate side thereof may be preferably made of GaN orAlGaN and the nitride semiconductor layer formed on the opposite side ofthe n-type contact layer to the substrate may be preferably made of GaN,InGaN or AlGaN. Particularly, the representative of the three-layerlaminated structure may include the three-layer laminated structure ofundoped GaN layer (third layer)/Si-doped GaN layer (secondlayer)/undoped GaN layer (first layer) in which the n-type contact layer(second layer) doped with Si is sandwiched between the undoped GaNlayers.

The second nitride semiconductor layer (n-type contact layer) can have acarrier concentration of not less than 3×10¹⁰/cm³ and the resistivity isless than 8×10⁻³ Ω·cm in the term of the mobility of the layer. Theresistivity of the conventional n-type contact layer has been limited to8×10⁻³ Ω·cm (for example, U.S. Pat. No. 5,733,796). The decrease of theresistivity can lower Vf. The resistivity of 6×10⁻³ Ω·cm or less can beachieved and more preferably, 4×10⁻³ Ω·cm or less. The lower limit isnot specified and it is desirable to adjust to 1×10⁻⁵ Ω·cm or ore. Ifthe resistivity becomes lower than the lower limit, the amount of theimpurity becomes too much and the crystallinity of the nitridesemiconductor tends to decline.

Moreover, a buffer layer which is grown at a temperature lower than thatfor the first nitride semiconductor is preferably formed between thesubstrate and the first nitride semiconductor layer. The buffer layermay be made by for example, growing AlN, GaN, AlGaN and the like at thetemperatures ranging from 400° C. to 900° C. to the thickness of 0.5 μmor less and acts as a underlying layer for relaxing a lattice mismatchbetween the substrate and the first nitride semiconductor and growingthe first nitride semiconductor layer having a good crystallinity.Particularly, in the case that the first nitride semiconductor layer ismade of GaN, the butter layer may be preferably made of GaN.

Further, the thickness of the third nitride semiconductor layer maypreferably be 0.5 μm or less. More preferably, the thickness of thethird nitride semiconductor layer may be 0.2 μm or less, most preferably0.15 μm or less. The lower limit is not specified and it is desirable toadjust to 10 Å or more, preferably 50 Å or more and most preferably 100Å or more. Since the third nitride semiconductor layer is an undopedlayer and usually has a high resistivity of 0.1 Ω·cm or more, in thecase that the third nitride semiconductor layer is thick, Vf tends notto decrease.

According to a second aspect of the present invention, there is provideda nitride semiconductor device, which is a light emitting device on asubstrate, comprising at least an n-type contact layer forming at leastan n-electrode on the substrate, an active layer where electrons andholes are recombined and a p-type contact layer forming a p-electrode,each layer being made of nitride semiconductor, wherein the n-typecontact layer is a super lattice layer made by laminating at least anitride semiconductor doped with an n-type impurity and an undopednitride semiconductor layer doped with no n-type impurity. Also, as inthe case of the first nitride semiconductor device described above, itis preferable that the first and third nitride semiconductor layers arenot doped with an n-type impurity or are doped by the concentration ofan n-type impurity smaller than that in the super lattice layer and areformed close to the first and second surface of the n-type contactlayer, respectively in a manner that the second nitride semiconductorlayer (n-type contact layer) is interposed between the first layer andthe third one.

In the second nitride semiconductor device, the super lattice structuremeans a structure made by laminating the nitride semiconductor layerswhich has a thickness of 100 Å or less, more preferably 70 Å or less andmost preferably 50 Å or less in the multi-layered structure. And in thisspecifications, the super lattice structure or layer includes a type ofmulti-layered film made by laminating layers which have differentconstitutions from each other and a type of multi-layered film made bylaminating layers which have the same constitutions and differentamounts of a n-type impurity from each other. Further, an undopednitride semiconductor layer means a nitride semiconductor layer which isnot intentionally doped with an impurity and has the same meaning as inthe case of the above first light emitting device.

Also, in the second nitride semiconductor device, a buffer layer whichis grown at a lower temperature than that for the first nitridesemiconductor layer may be formed between the substrate and the firstnitride semiconductor layer. The buffer layer may be made by forexample, growing AlN, GaN, AlGaN and the like at the temperaturesranging from 400° C. to 900° C. to the thickness of 0.5 μm or less andacts as a underlying layer for relaxing a lattice mismatch between thesubstrate and the nitride semiconductor and growing the first nitridesemiconductor layer having a good crystallinity.

The second nitride semiconductor layer may be made by laminating twokinds of nitride semiconductor layers which have different band gapenergy from each other and may be made by laminating another nitridesemiconductor between said two kinds of nitride semiconductor layers.

In this case, said two kinds of nitride semiconductor layers preferablyhave different concentrations of an n-type impurity doped from eachother. Hereinafter, the configuration of the super lattice layer inwhich the nitride semiconductor layers have different concentrations ofan impurity from each other is called modulation doping.

Also, in the case that the second nitride semiconductor layer is formedby laminating two kinds of layers which have different band gap energyfrom each other, the layer having a higher band gap energy may be dopedwith a n-type impurity in a larger amount or the layer having a lowerband gap energy may be doped in a larger amount.

And in the case that the second nitride semiconductor layer is formed bylaminating two kinds of layers which have different band gap energy fromeach other, one of the layers is preferably is not doped with animpurity, that is, is an undoped layer. In this case, the layer having ahigher band gap energy may be, doped with an n-type impurity or thelayer having a lower band gap energy may be doped.

Further, in the present invention, said second nitride semiconductorlayer may be made by laminating two kinds of layers which have the sameconstitutions except different concentrations of a n-type impurity fromeach other. In this case, one of the two kinds of nitride semiconductorlayers is preferably an undoped layer which is not doped with a n-typeimpurity.

Particularly, a typical n-type contact layer in a form of a superlattice structure is made by laminating alternately nitridesemiconductor layers selected from the combinations of GaN/GaN,InGaN/GaN, AlGaN/GaN and InGaN/AlGaN and either one of the nitridesemiconductor layers is preferably doped with Si.

Further, in the case that the third nitride semiconductor layer isprovided, it is preferable that the third nitride semiconductor layer isundoped and has a thickness of 0.1 μm or less. More preferably, thethird nitride semiconductor layer has a thickness of 500 Å or less, andmost preferably, 200 Å or less. The lower limit of the thickness thethird nitride semiconductor layer is not particularly specified and isdesirably controlled to 10 Å or more. In the case that the third nitridesemiconductor layer is not a super lattice layer, but an undoped μsinglelayer, the resistivity thereof is usually as high as 1.times.10.sup.-1Ω·cm or more. Therefore, when the third nitride semiconductor layer isgrown to the thickness of more than 0.1 μm contrarily, Vf tends not todecrease. When the third nitride semiconductor layer is an undopedlayer, the nitride semiconductor layer has a good crystallinity and theactive layer which is grown thereon also has a good crystallinity,resulting in the good improvement of the output.

The n-type contact layer constituting the super lattice structure canhave a carrier concentration of not less than 3×10¹⁸/cm³ and consideringthe mobility of the layer, the resistivity thereof is less than 8×10⁻³Ω·cm. The resistivity of the prior n-type contact layer is limited to8×10⁻³ Ω·cm, but the decrease of the resistivity can lead to thedecrease of Vf, as in the case of the first nitride semiconductordevice. The realizable resistivity is 6×10⁻³ Ω·cm or less and morepreferably, 4×10⁻³ Ω·cm or less. The lower limit is not particularlyspecified and desirably controlled to 1×10⁻⁵ Ω·cm or more. If theresistivity is below the lower limit, the amount of an impurity is toomuch and the crystallinity of the nitride semiconductor tends todeteriorate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic sectional view of the LED device structure of anembodiment according to the present invention.

FIG. 2 is a schematic sectional view of the LED device structure ofanother embodiment according to the present invention.

DETAILED DESCRIPTION OF THE INVENTION Embodiment 1

The first light emitting device according to the present inventioncomprises a nitride semiconductor layer which has an at leastthree-layer laminated structure between the active layer and thesubstrate. The first nitride semiconductor layer is undoped, so as togrow a second nitride semiconductor layer which contains a n-typeimpurity and has a good crystallinity. If the first nitridesemiconductor layer is intentionally doped with all impurity, thecrystallinity thereof deteriorates and it is difficult to grow a secondnitride semiconductor which has a good crystallinity. Next, the secondnitride semiconductor layer is doped with a n-type impurity and has alow resistivity and a high carrier concentration, to act a contact layerfor forming a n-electrode. Therefore, the resistivity of the secondnitride semiconductor layer is desirably as low as possible to obtain agood ohmic contact with the n-electrode material and is preferably lessthan 8×10³ Ω·cm. Next, the third nitride semiconductor layer is alsoundoped. This is because the second nitride semiconductor layer whichhas a low resistivity and a large carrier concentration does not have avery good crystallinity. If an active layer, cladding layer and the likeare grown directly on such a second nitride semiconductor layer, thecrystallinity of those layers deteriorates. When the third nitridesemiconductor layer which is undoped and has a good crystallinity isinterposed between those layers, the third nitride semiconductor layeracts as a buffer layer for growing the active layer. Further, when anundoped layer having a relatively high resistivity is interposed betweenthe active layer and the second layer, the leak current of the devicecan be prevented and the backward withstand voltage can be enhanced. Andthe second nitride semiconductor layer has a carrier concentration ofmore than 3×10¹⁸/cm³. An n-type impurity include IV group elements aridpreferably Si or Ge is used, more preferably Si.

In the first nitride semiconductor light emitting device, due to theundoped first nitride semiconductor layer between the active layer andthe substrate, the second nitride semiconductor layer doped with ann-type impurity can be grown in such a manner that the crystallinity ofthe second nitride semiconductor is maintained. Therefore, the secondnitride semiconductor layer doped with an n-type impurity which has agood crystallinity and a large thickness can be grown. Moreover, theundoped third nitride semiconductor layer acts as an underlying layerhaving a good crystallinity for the layer to be grown thereon.Therefore, the resistivity of the second nitride semiconductor layer canbe reduced and the carrier concentration thereof can be increased,resulting in the realization of the nitride semiconductor device havingan extremely high efficiency. Thus, according to the present invention,a light emitting device having a low Vf and threshold can be realizedand the heating value of the device can be decreased, with the resultthat the device having a high reliability can be provided.

Embodiment 2

The second light emitting device according to the present inventioncomprises a nitride semiconductor super lattice layer as a n-typecontact layer between the active layer and the substrate. This superlattice layer has a first surface and a second surface and comprises afirst nitride semiconductor layer which is undoped or has a lowerconcentration of a n-type impurity than that of the second nitridesemiconductor layer on the first surface, so as to grow a super latticelayer having a good crystallinity. The first nitride semiconductor layeris most preferably undoped and may be doped with a n-type impurity in asmaller amount than that in the second nitride semiconductor layer,because the second nitride semiconductor layer is in a super latticestructure. The n-type impurity includes IV group elements andpreferably, Si or Ge is used and more preferably, Si.

Next, when the n-type contact layer is in a super lattice structure,each nitride semiconductor layer constituting the super lattice layerhas a thickness of not more than the elastic stain limit and therefore,the nitride semiconductor layer having very few crystal defects can begrown. Moreover, the crystal defects developing through the firstnitride semiconductor layer from the substrate can be prevented to someextent, the third nitride semiconductor layer having a goodcrystallinity can be grown on the super lattice layer. What is worthy ofmention is that the effect similar to HEMT can be obtained.

This super lattice layer is preferably formed by laminating alternatelya nitride semiconductor layer having a higher band gap energy and anitride semiconductor layer having a band gap energy lower than that ofsaid nitride semiconductor layer having a higher band gap energy, thetwo layers having different impurity concentrations. Thickness of thenitride semiconductor layer having a higher band gap energy and thenitride semiconductor layer having a lower band gap energy whichconstitute the super lattice layer is preferably controlled to be within100 Å, more preferably within 70 Å and most preferably within a rangefrom 10 to 40 Å. If the thickness of the two layers exceeds 100 Å, thenitride semiconductor layer having a higher band gap energy and thenitride semiconductor layer having a lower band gap energy becomethicker than the elastic strain limit and microscopic cracks or crystaldefects tend to develop in the film. While the lower limit of thethickness of the nitride semiconductor layer having a higher band gapenergy and the nitride semiconductor layer having a lower band gapenergy is not specified and may be of any value as long as it ismonoatomic layer or thicker, it is most preferably 10 Å or greater.Further, the nitride semiconductor layer having a higher band gap energyis desirably made by growing a nitride semiconductor which includes atleast Al, preferably Al_(X)Ga_(1-X)N (0<X≦1). While the nitridesemiconductor layer having a lower band gap energy may be anything aslong as it is a nitride semiconductor having a band gap energy lowerthan that of the nitride semiconductor layer having a higher band gapenergy, it is preferably made of a nitride semiconductor of binary mixedcrystal or ternary mixed crystal such as Al_(Y)Ga_(1-Y)N (0<Y≦1, X>Y)and In_(Z)Ga_(1-Z)N (0≦Z<1) which can be grown easily and provide goodquality of crystal. It is particularly preferable that the nitridesemiconductor layer having a higher band gap energy is made ofAl_(X)Ga_(1-X)N (0<x<1) which does not substantially include In or Gaand the nitride semiconductor layer having a lower band gap energy ismade of In_(Z)Ga_(1-Z)N (0≦Z<1) which does not substantially include Al.And for the purpose of obtaining super lattice of excellent quality ofcrystal, the combination of Al_(X)Ga_(1-X)N (0<X≦0.3) with the mixingproportion of Al (value of X) being not more than 0.3 and GaN is mostpreferable.

When the second nitride semiconductor layer constitute a cladding layerwhich functions as a light trapping layer and a carrier trapping layer,it must have a band gap energy higher than that of a quantum well layerof the active layer. A nitride semiconductor layer having a higher bandgap energy is made of a nitride semiconductor of high mixing proportionof Al. It has been very difficult to grow a crystal of nitridesemiconductor of high mixing proportion of Al according to the priorart, because of cracks which are likely to develop in a thick film. Inthe case of a super lattice layer according to the present invention,however, cracks are made less likely to occur because the crystal isgrown to a thickness within the elastic strain limit, even when a singlelayer constituting the super lattice layer is made with a somewhat highmixing proportion of Al. With this configuration, a layer having a highmixing proportion of Al can be grown with good quality of crystal andtherefore, effects of light trapping and carrier trapping can beenhanced, resulting in reducing the threshold voltage in the laserdevice and reducing Vf (forward voltage) in the LED device.

Further, it is preferable that n-type impurity concentration is set tobe different between the nitride semiconductor layer having a higherband gap energy and the nitride semiconductor layer having a lower bandgap energy of the second nitride semiconductor layer. This configurationis the so-called modulation doping. When one layer is made with lowern-type impurity concentration or is preferably undoped with the impurityand the other layer is doped in a higher concentration, this modulationdoping is also capable of decreasing the threshold voltage and Vf. Thisis because the presence of a layer having a low impurity concentrationin the super lattice layer increases the mobility in the layer, andcoexistence of a layer having a high concentration of impurity makes itpossible to form a super lattice layer even when the carrierconcentration is high. That is, it is supposed that the coexistence of alayer of low impurity concentration and high mobility and a layer ofhigh impurity concentration and high carrier concentration allows alayer having a high impurity concentration and high mobility to be acladding layer, thus decreasing the threshold voltage and Vf.

When a nitride semiconductor layer having a high band gap energy isdoped with an impurity in a high concentration, the modulation dopingeffect is supposed to generate two-dimensional electron gas between ahigh impurity concentration layer and a low impurity concentrationlayer, so that the resistivity decreases due to the effect of thetwo-dimensional electron gas. In a super lattice layer made bylaminating a nitride semiconductor layer which is doped with an n-typeimpurity and has a high band gap energy and an undoped nitridesemiconductor layer with a low band gap energy, for example, the barrierlayer side is depleted in the hetero-junction interface between thelayer which is doped with the n-type impurity and the undoped layer,while electrons (two-dimensional electron gas) accumulate in thevicinity of the interface on the side of the layer having a lower bandgap. Since the two-dimensional electron gas is formed on the lower bandgap side and therefore the electron movement is not subject todisturbance by the impurity, electron mobility in the super latticeincreases and the resistivity decreases. It is supposed that themodulation doping on P side is caused by the effect of thetwo-dimensional positive hole gas. In the case of p layer, AlGaN hashigher resistivity than that GaN has. Thus it is supposed that, becausethe resistivity is decreased by doping AlGaN with p type impurity in ahigher concentration, a substantial decrease is caused in theresistivity of the super lattice layer, thereby making it possible todecrease the threshold value when the device is made.

When a nitride semiconductor layer having a low band gap energy is dopedwith an impurity in a high concentration, such an effect as describedbellow is expected to be produced. When the AlGaN layer and the GaNlayer are doped with the same amounts of Mg, for example, acceptor levelof Mg becomes deeper and the activation ratio becomes lower in the AlGaNlayer. In the GaN layer, on the other hand, acceptor level of Mg becomesless deep and the Mg activation ratio becomes higher than in the AlGaNlayer. When doped with Mg in a concentration of 1×10²⁰/cm³, for example,carrier concentration of about 1×10¹⁸/cm³ is obtained in GaN, while theconcentration obtained in AlGaN is only about 1×10¹⁷/cm³. Hence in thepresent invention, a super lattice layer is made from AlGaN and GaN andthe GaN layer front which higher carrier concentration can be expectedis doped with greater amount of impurity, thereby forming super latticeof a high carrier concentration. Moreover, because tunnel effect causesthe carrier to move through the AlGaN layer of a lower impurityconcentration due to the super lattice structure, the carrier is notunder substantially no influence of the AlGaN layer, while the AlGaNlayer functions also as a cladding layer having a high band gap energy.Therefore, even when the nitride semiconductor layer having a lower bandgap energy is doped with a greater amount of impurity, very good effectcan be obtained in decreasing the threshold voltage of the laser deviceor LED device. The above description deals with a case of forming thesuper lattice layer on p-type layer side, although similar effect can beobtained also when a super lattice layer is formed on the n layer side.

When the nitride semiconductor layer having a higher band gap energy isdoped with an n-type impurity in a high concentration, the amount ofdoping in the nitride semiconductor layer having a higher band gapenergy is preferably controlled within d range from 1×10¹⁷/cm³ to1×10²⁰/cm³, or more preferably within a range from 1×10¹⁸/cm³ to5×10¹⁹/cm³. When the impurity concentration is lower than 1×10¹⁷/cm³,the difference from the concentration in the nitride semiconductor layerhaving a lower band gap energy becomes too small to obtain a layer ofhigh carrier concentration. When the impurity concentration is higherthan 1×10²⁰/cm³, on the other hand, leak current in the device itselftends to increase. Meanwhile the n-type impurity concentration in thenitride semiconductor layer having a lower band gap energy may be at anylevel as long as it is lower than that of the nitride semiconductorlayer having a higher band gap energy, but it is preferably lower thanone tenth of the latter. Most preferably the nitride semiconductor layerhaving a lower band gap energy is undoped, in which case a layer of thehighest mobility can be obtained. However, because each of the componentlayers of a super lattice layer is thin, some of the n-type impuritydiffuses from the nitride semiconductor layer having a higher band gapenergy into the nitride semiconductor layer having a lower band gapenergy. Therefore, the n-type impurity concentration in the nitridesemiconductor layer having a lower band gap energy is preferably1×10¹⁹/cm³ or less. The n-type impurity is selected from among theelements of IVB group and VIB group of the periodic table such as Si,Ge, Se, S and O, and preferably selected from among Si, Ge and S. Theeffect is the same also in case the nitride semiconductor layer having ahigher band gap energy is doped with less amount of n-type impurity andthe nitride semiconductor layer having a lower band gap energy is dopedwith greater amount of n-type impurity. Although, the above descriptiondeals with a case of modulation doping in which the super lattice layeris preferably doped with an impurity, it is also possible that theimpurity amount in the nitride semiconductor layer having a higher bandgap energy is the same as in the nitride semiconductor layer having alower band gap energy.

In the nitride semiconductor layer constituting the super lattice layer,the layer doped with the impurity in a higher concentration ispreferably doped so that such a distribution of impurity concentrationis obtained, that the impurity concentration is high in the middleportion of the semiconductor layer in the direction of thickness and islow (or preferably undoped) in the portions near the both ends. When thesuper lattice layer is formed from the AlGaN layer doped with Si asn-type impurity and the undoped GaN layer, the AlGaN layer releaseselectrons as donor into the conductive band because it is doped with Siand the electrons fall in the conductive band of the GaN which has a lowpotential. Because the GaN crystal is not doped with the donor impurity,carrier disturbance due to an impurity does not occur. Thus theelectrons can move easily in the GaN crystal, namely high electronmobility is obtained. This is similar to the effect of thetwo-dimensional electron gas described previously, thus increasing themobility of the electrons substantially in the transverse direction anddecreasing the resistivity. Further, the effect is enhanced when thecentral region of the AlGaN layer having a higher band gap energy isdoped with the n-type impurity in a high concentration. That is, amongthe electrons that move in GaN, electrons are more or less subject todisturbance by the n-type impurity ions (Si in this case) which arepresent in AlGaN. However, when end portions of the AlGaN layer in thedirection of thickness are undoped, electrons become less subject to thedisturbance of Si, and therefore mobility in the undoped GaN layer isfurther improved. Similar effect is obtained also when super latticelayer is formed on the p layer side, although the action is differentsomewhat, and it is preferable that the nitride semiconductor layerhaving a higher band gap energy is doped with the p-type impurity in ahigher concentration at the middle portion thereof and doped in a lowerconcentration or undoped at both end portions thereof. Although theimpurity concentration distribution may also be realized in the nitridesemiconductor layer having a lower band gap energy doped with the n-typeimpurity in a higher concentration, a super lattice layer made by dopingthe nitride semiconductor layer having a lower band gap energy in ahigher concentration tends to have a less effect.

In the device according to the present invention, the third nitridesemiconductor layer is also undoped or doped with an n-type impurity ina concentration lower than that in the second nitride semiconductorlayer. If the third nitride semiconductor layer containing a largeamount of impurity is grown directly on the top layer of the superlattice layer, the crystallinity of the third nitride semiconductorlayer tends to deteriorate. Therefore, the third nitride semiconductorlayer is doped with an n-type impurity in a low concentration and mostpreferably undoped, so as to grow b the third nitride semiconductorlayer having a good crystallinity. The composition of the third nitridesemiconductor layer is not matter of importance. But the third nitridesemiconductor layer is preferably made of In_(X)Ga_(1-X)N (0≦X≦1), morepreferably In_(X)Ga_(1-X)N (0<X≦0.5) and in such a case, the thirdnitride semiconductor layer acts as a buffer layer for the layers to begrown thereon, with the result that the layers above the third nitridesemiconductor layer can be easily grown. Further, when the layer havinga relatively high resistivity such as an undoped single layer isinterposed between the active layer and the second layer, the leakcurrent in the device can be prevented and the backward withstandvoltage can be enhanced.

Example 1 Super Lattice Structure LED

Undoped GaN//Si Doped GaN (B)/Undoped GaN (A)//Undoped GaN.

FIG. 1 is a schematic sectional view of the LED structure of one exampleaccording to the second embodiment of the present invention. The methodof manufacturing the device of the present invention will be describedin conjunction with this drawing.

A C-plane sapphire substrate 1 is set in the reactor and the insideatmosphere of the reactor is fully replaced with hydrogen. Thetemperature of the substrate is increased to 1050° C. with hydrogenbeing flown in order to clean the substrate. As the substrate 1, inaddition to C-plane sapphire substrate, the insulating substrate such asR- or A-plane sapphire substrate and the spinel (MgAl₂O₄) substrate andthe semiconductor substrate such as SiC(including 6H, 4H 3C), Si, ZnO,GaAs, GaN and the like may be used.

Buffer Layer 2

Subsequently, the temperature is decreased to 510° C. A buffer layer 2made of GaN having a thickness of about 200 Å is grown using ammonia andTMG (trimethylgallium) as a source of GaN.

First Nitride Semiconductor Layer 3

After growing the buffer layer 2, only TMG is stopped and thetemperature is increased to 1050° C. At 1050° C., in the same way usingammonia and TMG as a source of GaN, a first nitride semiconductor layer3 made of undoped GaN was grown to the thickness of 5 μm. The firstnitride semiconductor layer is grown at a temperature higher than thatin the case of the buffer layer, for example, at 900° C. to 1100° C. Thefirst nitride semiconductor layer 3 can be made ofIn_(X)Al_(Y)Ga_(1-X-Y)N (0≦X, 0≦Y, X+Y≦1) and the composition thereof isnot a matter of importance. But preferably, the first nitridesemiconductor layer is made of GaN or Al_(X)Ga_(1-X)N with X being notmore than 0.2, with the result that the nitride semiconductor layerhaving a less crystal defects can be easily obtained. The thickness ofthe first nitride semiconductor layer is not a matter of importance andis larger than that of buffer layer, usually being not less than 0.1 μm.Since this layer is an undoped layer, it is similar to the intrinsicsemiconductor and has a resistivity of larger than 0.2 Ω·cm. Theresistivity of the first nitride semiconductor layer may be decreased bydoping an n-type impurity such as Si and Ge in a less amount than thatin the second nitride semiconductor layer.

Second Nitride Semiconductor Layer 4

Subsequently, at 1050° C., an undoped GaN layer having a thickness of 20Å is grown using TMG and ammonia gas. Next, at the same temperature,silane gas is added and a GaN layer doped with Si to 1×10¹⁹/cm³ is grownto the thickness of 20 Å. Thus, a pair of A layer made of undoped GaNlayer having a thickness of 20 Å and B layer made of Si-doped GaN havinga thickness of 20 Å is grown. The pair is laminated in 250 layers,resulting in a second nitride semiconductor layer 4 in the form of superlattice structure having a thickness of 1 μm.

Third Nitride Semiconductor Layer 5

Next, only silane gas is stopped and at 1050° C., in the same way, athird nitride semiconductor layer 5 made of undoped GaN is grown to thethickness of 100 Å. The third nitride semiconductor layer b can be madeof In_(Y)Al._(X)Ga_(1-X-Y)N (0≦X, 0≦Y, X+Y≦1) and the compositionthereof is not a matter of importance. But preferably, the third nitridesemiconductor layer is made of GaN, Al_(X)Ga_(1-X)N with X being notmore than 0.2 or In_(Y)Ga_(1-Y)N with Y being not more than 0.1, withthe result that the nitride semiconductor layer having less crystaldefects can be easily obtained. In the case of that the layer made ofInGaN is grown, when the nitride semiconductor layer including Al isgrown thereon, cracks are prevented from developing into the nitridesemiconductor layer including Al.

Active Layer 6

Next, the temperature is decreased to 800° C. and the carrier gas ischanged into nitrogen. An undoped In_(0.4)Ga_(0.6)N layer having athickness of 30 Å is grown, using TMG, TMI (trimethylindium) and ammoniato form an active layer 6 having a single quantum well structure. Thislayer may have a multiple quantum well structure made of InGaN.

P-Side Cladding Layer 7

Next, the temperature is increased to 1050° C. and using TMG, TMA,ammonia and Cp2Mg (cyclopentadienyl magnesium), a p-side cladding layer7 made of p-type Al_(0.1)Ga_(0.9)N doped Mg to 1×10²⁰/cm³ is grown tothe thickness of 0.1 μm. This layer functions as a carrier trappinglayer. This layer is desirably made of a nitride semiconductorcontaining Al, preferably Al_(Y)Ga_(1-Y)N (0<Y<1). It is desirable togrow a Al_(Y)Ga_(1-Y)N layer with Y being not more than 0.3 to athickness of not more than 0.5 μm, so as to obtain a layer having a goodcrystallinity.

And the p-side cladding layer 7 maybe a super lattice layer. When asuper lattice layer is in the p-side layer region, the thresholds arefurther decreased and a good result is obtained. Any layer in the p-sidelayer region may be a super lattice layer.

P-Side Contact Layer 8

Subsequently, at 1050° C., using TMG, ammonia and Cp2Mg, a p-sidecontact layer 8 made of p-type GaN doped with Mg 1×10²⁰/cm³ is grown tothe thickness of 0.1 μm. The p-side contact layer 8 also can be made ofIn_(X)Al_(Y)Ga_(1-X-Y)N (0≦X, 0≦Y, X+Y≦1) and the composition thereof isnot a matter of importance. But preferably, the p-side contact layer ismade of GaN, with the result that the nitride semiconductor layer havingless crystal defects can be easily obtained and a preferable ohmiccontact with the p-electrode material can be achieved.

After the reaction is completed, the temperature is decreased to roomtemperature. Additionally, annealing is performed to the wafer at 700°C. in nitrogen atmosphere within the reactor, so as to make the p-typelayers less resistive.

After annealing, the wafer is removed out of the reactor. A mask of apredetermined shape is formed on the top surface of the p-side contactlayer which is an uppermost layer and etching is conducted from thep-side contact layer side with RTF (reactive ion etching) apparatus, toexpose the surface of the second nitride semiconductor layer 4, as shownin FIG. 1.

After etching, a transparent p-electrode 9 containing Ni and Au andhaving a thickness of 200 Å is formed on the almost entire surface ofthe uppermost p-side contact layer and a p-pad electrode 10 made of Aufor bonding is formed on the p-electrode 9. Meanwhile, a n-electrode 11containing W and Al is formed on the surface of the second nitridesemiconductor layer 4 which has been exposed by etching. Finally, aninsulating film 12 made of SiO₂ is formed to protect the surface of thep-electrode 9, as shown in FIG. 1. Then the wafer is scribed and cleavedinto LED devices which are 350 μm by 350 μm square.

For this LED device, pure green light omission of 520 nm was obtained ata forward voltage of 20 mA. Vf was decreased by 0.2 to 0.4 V and theoutput was enhanced by 40 to 50% at 20 mA, as compared with theconventional green light emitting LED made by laminating on thesubstrate a buffer layer made of GaN, n-side contact layer made of Sidoped GaN, an active layer made of InGaN in the form of a single quantumwell structure, a p-side cladding layer made of Mg doped AlGaN and ap-side contact layer made of Mg doped GaN sequentially. The staticwithstand voltage was higher than that of the conventional LED by 5times or more.

Example 2 LED in the Form of a Super Lattice Structure

Si Doped GaN//Si-Doped GaN (B)/Undoped GaN (A)//Si Doped GaN

With the same procedures as in Example 1, the first nitridesemiconductor layer 3 is made by growing GaN doped with Si to 1×10¹⁹/cm³to the thickness of 3 μm and the third nitride semiconductor layer 5 ismade by growing GaN doped with Si to 1×10¹⁷/cm³. The other constructionsof the LED device were the same as in Example 1. Compared with the LEDdevice in Example 1, the output was decreased by about 10% and Vf andstatic withstand voltage were almost the same.

Example 3 LED in the Form of a Super Lattice Structure

Undoped CaN//Si Doped GaN/Undoped InGaN//Undoped GaN

The LED device was fabricated in the same manner as in Example 1, exceptthat the second nitride semiconductor was formed as follows.

That is, at 1050° C., using TMG, ammonia gas and Si gas, a GaN layerdoped with Si to 1×10¹⁹/cm³ which has a thickness of 25 Å is grown.Subsequently, at 800° C., using TMI, TMG and ammonia gas, an undopedInGaN layer having a thickness of 75 μm is grown. In this way, A layermade of Si doped GaN layer having a thickness of 25 Å and B layer madeof undoped InGaN layer having a thickness of 75 Å are laminatedalternately in 100 layers, respectively, resulting in the second nitridesemiconductor layer in the form of a super lattice structure having atotal thickness of 2 μm.

The LED in the form of a super lattice structure of Example 3 had almostsimilar properties to those of Example 1.

Example 4 LED in the Form of a Super Lattice Structure

Undoped GaN//Si Doped AlGaN/Undoped GaN//Undoped GaN

With the same procedure as in Example 1, the second nitridesemiconductor layer 4 is made by laminating alternately A layer made ofundoped GaN layer having a thickness of 40 Å and B layer made ofAl_(0.1)Ga_(0.9)N layer doped Si to 1×10¹⁸/cm³ evenly which has athickness of 60 Å, in 300 layers, respectively, resulting in a superlattice structure having a total thickness of 3 μm. Other constructionsof the LED device are the same as in Example 1. The LED had almostsimilar properties to those of

Example 5 LD in the Form of a Super Lattice Structure

Undoped InGaN//Si Doped GaN (B)/Undoped GaN (A)/Undoped GaN

FIG. 2 is a schematic sectional view showing the structure of the laserdevice according to another example of the present invention. In thisdrawing, the device which is cut in the parallel direction to theresonating plane of the emission is shown. Example 5 will be describedwith reference to FIG. 2.

With the same procedure as in Example 1, on the C-plane sapphiresubstrate, a buffer layer 21 made of GaN having a thickness of 200 Å, afirst nitride semiconductor layer 22 made of undoped GaN having athickness of 5 μm, a second nitride semiconductor layer 23 in the formof a super lattice structure having a total thickness of 3 μm made bylaminating A layer made of undoped GaN layer having a thickness of 20 Åand B layer made of Si doped GaN having a thickness of 20 Å are grown(the second nitride semiconductor layer 4 has the same construction asthat of Example 1).

Other substrate than the sapphire may be used. On the substrate made ofother materials than nitride semiconductor like sapphire, a first GaNlayer is grown. A protective film on which a nitride semiconductor suchas SiO₂ cannot be easily gown is formed partially on the first GaNlayer. A second nitride semiconductor layer is grown on the firstnitride semiconductor layer via the protective film and thus, the secondnitride semiconductor layer is grown in the transverse direction onSiO₂. The second nitride semiconductor layer links with each other inthe transverse direction. The second nitride semiconductor layerobtained in this way is most preferably used as a substrate, so as toachieve a good crystallinity of the nitride semiconductor. When thisnitride semiconductor substrate is used as a substrate, the buffer layeris not needed to be grown.

Third Nitride Semiconductor Layer 24

At 800° C., using TMI, TMG and ammonia, a third nitride semiconductorlayer made of undoped In_(0.05)Ga_(0.95)N is grown to the thickness of500 Å.

N-Side Cladding Layer 25

Next, at 1050° C., a n-type Al_(0.2)Ga_(0.8)N layer doped with Si to1×10¹⁹/cm³ which has a thickness of 20 Å and an undoped GaN layer havinga thickness of 20 Å are laminated alternately, in 200 layers, resultingin a super lattice structure having a total thickness of 0.8 μm. Then-side cladding layer 254 functions as a carrier trapping layer andlight trapping layer and is preferably made of a nitride semiconductorcontaining Al, more preferably AlGaN. The total thickness of the superlattice layer is preferably controlled within the range of from 100 Å to2 μm, more preferably within the range of from 500 Å to 2 μm. Moreover,the concentration of an impurity is high in the middle portion of then-side cladding layer and low in both end portions thereof.

N-Side Optical Waveguide Layer 26

Subsequently, an n-side optical guide layer 26 made of n-type GaN dopedwith Si to 1×10¹⁷/cm³ is grown to the thickness of 0.1 μm. This n-sideoptical waveguide layer functions as an optical waveguide layer for theactive layer and is desirably made of GaN and InGaN. The thickness ofthe n-side optical waveguide layer is usually not more than 5 μm,preferably 200 Å to 1 μm. This n-side optical waveguide layer is usuallydoped with an n-type impurity such as Si and Ge to have a n-typeconductivity and particularly, may be undoped.

Active Layer 27

Next, at 800° C., an active layer 27 is made by laminating alternately awell layer which is made of undoped In_(0.2)Ga_(0.8)N and has athickness of 25 Å and a barrier layer which is made of undopedIn_(0.01)Ga_(0.95)N and has a thickness of 50 Å, thereby forming a layerof a multiple quantum well structure (MQW) having a total thickness 175Å.

P-Side Cap Layer 28

Next, at 1050° C., a p-side cap layer 28 which has a band gap energyhigher than that of the p-side optical waveguide layer 8 and that of theactive layer 6 and is made of p-type Al_(0.3)Ga_(0.7)N doped with Mg to1×10²⁰/cm³ is grown to the thickness of 300 Å. The p-side cap layer 28is doped with a p-type impurity, but the thickness thereof is small andtherefore the p-side cap layer may be of i-type wherein carriers arecompensated by doping n-type impurity, preferably may be undoped andmost preferably may be doped with a p-type impurity. The thickness ofthe p-side cap layer 28 is controlled within 0.1 μm, more preferablywithin 500 Å and most preferably within 300 Å. When grown to a thicknessgreater than 0.1 μm, cracks tend to develop in the p-side cap layer 28making it difficult to grow a nitride semiconductor layer of goodquality of crystal. In the case of AlGaN having a high proportion of Al,the small thickness can make it for LD device to oscillate easily. WhenAl_(Y)Ga_(1-Y)N has Y value of not less than 0.2, the thickness isdesirably control led within 500 Å. The lower limit of the thickness ofthe p-side cap layer 76 is not specified and but the thickness ispreferably 10 Å or more.

P-Side Optical Waveguide Layer 29

Next, a p-side optical waveguide layer 29 which has a band gap energylower than that of the p-side cap layer 28 and is made of p-type GaNdoped with Mg to 1×10¹⁹/cm³ is grown to a thickness of 0.1 μm. Thislayer functions as an optical waveguide layer for the active layer andis desirably made of GaN and InGaN as in the case of the n-side opticalwaveguide layer 26. This p-side optical waveguide layer also functionsas a buffer layer when the p-side cladding layer 30 is grown. Thethickness of the p-side optical waveguide layer is preferably 100 Å to 5μm, more preferably 200 Å to 1 μm. The p-side optical waveguide layer isusually to doped with a p-type impurity such as Mg to have a p-typeconductivity, but may not be doped with an impurity.

P-Side Cladding Layer 30

Next, a p-side cladding layer 30 is made by laminating alternately ap-type Al_(0.2)Ga_(0.2)N layer which is doped with Mg to 1×10²⁰/cm³ andhas a thickness of 20 Å and a p-type GaN layer which is doped with Mg to1×10¹⁹/cm³ and has a thickness of 20 Å, thereby forming a super latticelayer having a total thickness 0.8 μm. This layer functions as a carriertrapping layer, as in the case of n-side cladding layer 25. Also thislayer functions to decrease the resistivity in the p-type layers due tothe super lattice structure. The thickness of the p-side cladding layer30 is not specified and desirably is within the range of from 100 Å to 2μm, more preferably within the range of from 500 Å to 1 μm. Theconcentration of an impurity may be high in the middle portion of thep-side cladding layer and low in both end portions thereof.

P-Side Contact Layer 31

Finally, a p-side contact layer 10 made of p-type GaN doped with Mg to2×10²⁰/cm³ is grown to the thickness of 150 Å. It is advantageous thatthe thickness of the p-side contact layer is controlled to not more than500 Å, preferably not more than 400 Å and not less than 20 Å, so as todecrease the resistivity of the p-type layers and decrease the thresholdvoltage.

After the completion of the reaction, the wafer is annealed at 700° C.within the nitrogen atmosphere in the reactor to make the p-type layersless resistive. After annealing, the wafer is removed out of the reactorand as shown in FIG. 2, the p-side contact layer 31 and the p-sidecladding layer 30 which are the uppermost layers are etched with RIEapparatus into a ridge geometry with a stripe width 4 μm.

After the ridge geometry is formed, as shown in FIG. 2, the p-sidecladding layer 30 which is exposed on both sides of the ridge stripe isetched to expose the surface of the second nitride semiconductor layer23 on which the n-electrode is to be formed. The exposed surface is madeof a super lattice layer having a large amount of impurity.

Next, the p-electrode 32 made of Ni/Au is formed on the entire surfaceof the ridge. Next, as shown in FIG. 2, an insulating film 35 made ofSiO, is formed on the surface of the p-side cladding layer 30 and thep-side contact layer 31 except for the p-electrode 32. A p-pad electrode33 which is connected electrically to the p-electrode 32 via theinsulating film 35 is formed. Meanwhile, the n-electrode made of W andAl is formed on the surface of the n-side contact layer 4 which has beenexposed.

After the electrode is formed, the back surface of the sapphiresubstrate of the wafer is polished to the thickness of about 50 μm. Andthen, the wafer is cleaved at the M-plane of sapphire and the bar withthe cleaved facet being a resonator plane is fabricated. The bar isscribed and separated parallel to the stripe electrode to fabricate alaser device. The resulting laser device configuration is shown in FIG.2. When this laser device was oscillated continuously at roomtemperature, the threshold current density was decreased to about 2.0kA/cm² and the threshold voltage was about 4.0V, compared to theconventional nitride semiconductor laser device which could oscillatecontinuously for 37 hours. The lifetime was 500 hours or longer.

Example 6 LED in the Form of a Super Lattice Structure

Undoped GaN//Undoped AlGaN/Si Doped GaN//Undoped GaN

With the same procedures as in Example 1, the second nitridesemiconductor layer 4 is made by laminating a GaN layer which is dopedwith Si to 1×10¹⁹/cm³ and has a thickness of 20 Å and an undopedAl_(0.10)Ga_(0.90)N layer having a thickness of 20 Å and growing such apair in 250 times, thereby forming a super lattice layer having a totalthickness of 1.0 μm (10000 Å). The other constructions are the same asin Example 1. The similar results were obtained to those in Example 1.

As described above, the nitride semiconductor device according to thepresent invention is made by laminating the first nitride semiconductorlayer which is undoped or has a small concentration of impurity, thesecond nitride semiconductor layer of a super lattice layer which has alarge concentration of impurity and the third nitride semiconductorlayer which is undoped or has a small concentration of impurity andtherefore, the LED which has low Vf and the laser device which has lowthresholds can be obtained. Moreover, since the second nitridesemiconductor layer has a low resistivity, the ohmic contact can beeasily obtained between the n-electrode and the second nitridesemiconductor layer and Vf is decreased. LED and the laser device havebeen described in this specifications, the present invention can beapplied to any device made of nitride semiconductor such as lightreceiving devices and solar cells, as well as power devices using theoutput of the nitride semiconductor.

Example 7 LED in the Form of a Three Layer Laminated Structure

Undoped GaN//Si Doped N-Type GaN//Undoped GaN

This LED is fabricated in the same manner as in Example 1, as shown inFIG. 1, an example of LED device of the first embodiment according tothe present invention, except that the n-type contact layer is made inthe form of the three layer laminated structure. Therefore, only then-type contact layer of the three layer laminated structure will bedescribed.

First Nitride Semiconductor Layer 3

In the same manner as in Example 1, after the growth of the buffer layer2, only TMG is stopped and the temperature is increased to 1050° C. At1050° C., using TMG and ammonia gas as source gas, a first nitridesemiconductor layer 3 made of undoped GaN is grown to the thickness of1.5 μm. The first nitride semiconductor layer is grown at a temperaturehigher than that in the case of the buffer layer, for example, at 90 to1100° C. The composition of the first nitride semiconductor layer is nota matter of importance, but preferably is made of Al_(X)Ga_(1-X)N with Xbeing not more than 0.2, with the result that the nitride semiconductorlayer having less crystal defects can be easily obtained. The thicknessthereof is not a matter of importance, but is larger than that of thebuffer layer and usually is within the range of from 0.1 to 20 μm. Sincethis layer is an undoped layer, it is similar to the intrinsicsemiconductor and has a resistivity of larger than 0.1 Ω·cm. Since thefirst nitride semiconductor layer is grown at a temperature higher thanthat in the case of the buffer layer, this layer is undoped, althoughthis layer is different from said butter layer.

Second Nitride Semiconductor Layer 4

Subsequently, at 1050° C., using TMG and ammonia gas and silane gas asan impurity, a Si doped GaN layer is grown to the thickness of 3 μm. Thesecond nitride semiconductor layer 3 can be made ofIn_(X)Al_(Y)Ga_(1-Y)N (0≦X, 0≦Y, X+Y≦1) and the composition thereof isnot a matter of importance, preferably GaN, Al_(X)Ga_(1-N) with X beingnot more than 0.2 or In_(Y)Ga_(1-Y)N with Y being not more than 0.1,with the result that the nitride semiconductor layer having less crystaldefects can be easily obtained. The thickness of the second nitridesemiconductor layer is not a matter of importance and preferably iswithin the range of from 0.1 to 20 μm, because the n-electrode is formedthereon. In the case that using the other sapphire substrate which wasnot in the device structure, the nitride semiconductor layers were grownto a GaN layer in the same manner, the carrier density was 1×10¹⁹/cm³and the resistivity was 5×10⁻³ Ω·cm.

Third Nitride Semiconductor Layer 5

Next, silane gas is stopped and at 1050° C., a third nitridesemiconductor layer 5 made of undoped GaN is grown to the thickness of0.15 μm, in the same manner. The third nitride semiconductor layer 5 canalso be made of In_(X)Al_(Y)Ga_(1-Y)N (0≦X, 0≦Y, X+Y≦1) and thecomposition thereof is not a matter of importance, preferably GaN,Al_(X)Ga_(1-X)N with X being not more than 0.2 or In_(Y)Ga_(1-Y)N with Ybeing not more than 0.1, with the result that the nitride semiconductorlayer having less crystal defects can be easily obtained. When InGaN isgrown and on said InGaN layer, the nitride semiconductor layercontaining Al is grown, the cracks can be prevented from developing inthe nitride semiconductor layer containing Al. When the second nitridesemiconductor is made of a single nitride semiconductor, it is desirablethat the first, second and third nitride semiconductor layers are madeof a nitride semiconductor having the same composition, particularlyGaN.

The resulting LED device emitted pure green light of 520 nm at theforward voltage of 20 mA. At 20 mA, Vf was decreased by 0.1 to 0.2V andthe output was enhanced by 5 to 10%, compared with the conventional LEDemitting green light which was made by laminating sequentially on asapphire substrate, a buffer layer made of GaN, an n-side contact layermade of Si doped GaN, an active layer made of InGaN in the form of asingle quantum well structure, a p-side cladding layer made of Mg dopedAlGaN and a p-side contact layer made of Mg doped GaN.

Example 8

Undoped In.sub.0.05Ga.sub.0.95N//Si Doped N-Type GaN//Undoped GaN

The LD device is fabricated in the same manner as in Example 5, exceptfor the n-type contact layer.

With the same procedures as in Example 1, the buffer layer 21 which ismade of GaN and has a thickness of 200 Å is grown on the C-planesapphire substrate 20. And then, the temperature is increased to 1020°C. and at 1020° C., a first nitride semiconductor layer 22 made ofundoped GaN is grown to the thickness of 5 μm.

Subsequently, at 1020° C., using silane gas as an impurity gas, a secondnitride semiconductor layer (the n-type contact layer) made of Si dopedn-type GaN is grown. The resistivity of the resulting LD device was also5×10⁻³ Ω·cm.

Third Nitride Semiconductor Layer 24

Next, at 800° C., using TMI, TMG and ammonia, a third nitridesemiconductor layer made of undoped In_(0.08)Ga_(0.98)N is grown to thethickness of 500 Å.

N-Side Cladding Layer 25

Next, at 1020° C., a n-side cladding layer is made by laminatingalternately an n-type Al_(0.2)Ga_(0.8)N layer which is doped with Si to1×10¹⁷/cm³ and has a thickness of 40 Å and an undoped GaN layer having athickness of 40 Å, in 40 layers, thereby forming a super latticestructure. This n-side cladding layer functions as a carrier trappingand light trapping layer.

N-Side Optical Waveguide Layer 26

Subsequently, a n-side optical waveguide layer 26 made of n-type GaNdoped with Si to 1×10¹⁹/cm³ is grown to the thickness of 0.2 μm. Thisn-side optical waveguide layer 26 acts as an optical waveguide layer forthe active layer and preferably is made of GaN or InGaN. The thicknessof the n-side optical waveguide layer is usually within the range offrom 100 Å to 5 μm and preferably within the range of 200 Å to 1 μm.This n-side optical waveguide layer 5 may be undoped.

Active Layer

Next, at 800° C., an well layer made of Si doped In_(0.2)Ga_(0.8)N isgrown to the thickness of 25 Å. Next, the molar ratio of TMI is changedand a barrier layer made of Si doped In_(0.01)Ga_(0.99)N is grown to thethickness of 50 Å. This operation is repeated two times and finally, thewell layer is laminated, resulting in a multiple quantum well structure(MQW).

P-Side Capping Layer 28

Next, at 1020° C., using TMG, TMA, ammonia and Cp2Mg, a p-side cappinglayer 28 which has a band gap energy higher than that of the activelayer and is made of p-type Al_(0.3)Ga_(0.7)N doped with Mg to1×10²⁰/cm³ is grown to the thickness of 300 Å. The p-side cap layer 28is doped with a p-type impurity, but the thickness thereof is small andtherefore the p-side cal layer maybe of i-type wherein carriers arecompensated by doping n-type impurity. The thickness of the p-side caplayer 28 is controlled within 0.1 μm, more preferably within 500 Å andmost preferably within 300 Å. When grown to a thickness of greater than0.1 μm, cracks tend to develop in the p-side cap layer 28 making itdifficult to grow a nitride semiconductor layer of good quality ofcrystal. And carrier cannot pass the energy barrier by tunneling effect.Ion the case of AlGaN having a high proportion of Al, the smallthickness can make it for LD device to oscillate easily. For example, inthe case of Al_(Y)Ga_(1-Y)N with Y being not less than 0.2, thethickness is desirably controlled within 500 Å. The lower limit of thethickness of the p-side capping layer 28 is not specified, but thethickness is desirably not less than 10 Å as in the case of the laserdevice of Example 4.

P-Side Optical Waveguide Layer 29

Next, at 1020° C., a p-side optical waveguide layer 29 made of p-typeGaN dope with Mg to 1×10¹⁰/cm³ is grown to the thickness of 0.2 μm. Thislayer functions as an optical waveguide layer for the active layer, asin the case of the n-side optical waveguide layer 26. This layer isdesirably made of GaN or InGaN. The thickness is preferably within therange of from 100 Å to 5 μm, more preferably within the range of from200 Å to 1 μm. The p-side optical waveguide layer is usually ofp-conductivity by doping a p-type impurity such as Mg, but may be notdoped with an impurity.

P-Side Cladding Layer 30

Next, at 1020° C., a p-side cladding layer 30 is made by laminatingalternately a p-type Al_(0.25)Ga_(0.75)N layer which is doped with Mg to1×10²⁰/cm³ and has a thickness of 40 Å and an undoped p-type GaN layerhaving a thickness of 40 Å, in 40 layers, thereby forming a superlattice layer. This layer also functions as a carried trapping layerlike the n-side cladding layer 25. The resistivity and thresholds of thep-type layers tend to decrease because of the p-side cladding layer inthe form of a super lattice structure.

P-Side Contact Layer 31

Finally, a p-side contact layer 31 made of p-type GaN doped with Mg to2×10²⁰/cm³ is grown to the thickness of 150 Å.

After the completion of the reaction, the wafer is annealed at 700° C.within the nitrogen atmosphere in the reactor to make the p-type layersless resistive. After annealing, the wafer is removed out of the reactorand as shown in FIG. 2, the p-side contact layer 31 and the p-sidecladding layer 30 which are the uppermost layers are etched with RIEapparatus into a ridge geometry with a stripe width 4 μm. Particularly,when the nitride semiconductor layers containing Al which are above theactive layer are formed in the ridge geometry, the emission from theactive layer focuses under the stripe ridge, with the result that thetransverse mode is easily simplified and the thresholds are easilydecreased. After the ridge is formed, a mask is formed on the ridge andas shown in FIG. 2, the surface of the second nitride semiconductorlayer 23 on which n-electrode 34 is to be formed is exposedsymmetrically relative to the stripe ridge.

Next, the p-electrode 32 made of Ni/Au is formed on the entire surfaceof the ridge. Meanwhile, an n-electrode made of Ti and Al is formed onthe almost entire surface of the second nitride semiconductor layer 23of a stripe. The almost entire surface means the area having 80% or moreof the surface. Thus, it is extremely advantageous in decreasing thethresholds to expose the second nitride semiconductor layer 23symmetrically relative to the p-electrode 32 and provide with ann-electrode on the almost entire surface of the second nitridesemiconductor layer 23. Next, an insulating film 35 made of SiO₂ isformed between the p-electrode and the n-electrode. A p-pad electrode 33made of Au is formed which is connected electrically to the p-electrode32 via the insulating film 35.

After the electrode is formed, the back surface of the sapphiresubstrate of the wafer is polished to the thickness of about 50 μm. Andthen, the polished plane is scribed and the wafer is cleaved into barsperpendicularly with respect to the stripe electrode to fabricate aresonator on the cleaved facet. A dielectric film made of SiO₂ and TiO₂is formed on the facet of the resonator and finally, the bar is cutparallel to the p-electrode, resulting in laser devices. The resultingdevice is onto the heat sink. When the laser oscillation was tried atroom temperature, the continuous emission at a wavelength of 405 nm wasobserved The threshold current density was 2.5 kA/cm² and the thresholdvoltage was 4.0V. The lifetime was 500 hours or longer and enhanced 10times or more, compared with the conventional nitride semiconductorlaser device.

Example 9 LED in the Form of the Three Layer Laminated Structure

Undoped In_(0.05)Ga_(0.95)N//Si Doped N-Type GaN//Undoped GaN

The LED device is fabricated in the same manner as in Example 1, exceptthat a third nitride semiconductor layer made of undopedIn_(0.05)Ga_(0.95)N is grown to the thickness of 20 Å using TMG, TMI andammonia at 800° C. The resulting LED device had almost the sameproperties as those in Example 7.

For the three layer laminated structure, the principal object is thatthe carrier concentration in the second nitride semiconductor layerwhich functions as a n-type contact layer is increased, resulting inobtaining the contact layer which has an as low resistivity as possible.Therefore, the first nitride semiconductor layer may be doped with ann-type impurity within the range where the decrease of the resistivityin the second nitride semiconductor layer is not substantiallyinfluenced. The second nitride semiconductor layer is doped with ann-type impurity in high concentration and the third nitridesemiconductor layer is formed in order that the n-type cladding layer,the active layer and the like which are formed over the second nitridesemiconductor layer may have a good crystallinity. It should beunderstood that the doping of an impurity within the range where theobject of the invention can be achieved be within the scope of thepresent invention. When the first or third nitride semiconductor issubstantially doped with Si to not more than 1×10¹⁷/cm³, the occurrenceof leak current and a little decrease of the output is observed, but theresulting device can be practically useful (see the following Example 9or 11). Such a phenomenon can be applied to the case of the n-typecontact layer in the form of a super lattice structure. Therefore, inthe structure of undoped InGaN/Si doped n-type GaN or super latticestructure/undoped GaN, or undoped GaN/Si doped n-type GaN or superlattice structure/undoped GaN of tie above-mentioned Examples, at leasteither first or third nitride semiconductor layer may be doped with ann-type impurity, as long as the second nitride semiconductor layer isnot substantially influenced.

Example 10 LED in the Form of a Super Lattice Three Layer LaminatedStructure

Undoped InGaN/Undoped GaN//Si Doped GaN//Undoped GaN

With the same procedures as in Example 1, the buffer layer 2 is formedand then the first nitride semiconductor layer 3 made of undoped GaN isgrown to the thickness of 1.5 μm on the same conditions as in Example 1.

Next, at 1050° C., using TMG, ammonia gas and Si gas, a second nitridesemiconductor layer 4 is formed by growing a Si doped GaN layer dopedwith Si to 1×10¹⁹/cm³ to the thickness of 2.25 μm.

And then, at 1050° C., using TMG and ammonia gas, an undoped GaN layeris grown to the thickness of 20 Å and subsequently, at 800° C., usingTMI, TMG and ammonia gas, an undoped InGaN layer is grown to thethickness 10 μm. Thus, a third nitride semiconductor layer is made bylaminating alternately A layer made of an undoped GaN layer with thethickness of 20 Å and B layer made of undoped InGaN layer with thethickness of 10 Å, in 20 layers, respectively, thereby forming a superlattice structure having a total thickness of 600 Å. Other constructionsare the same as those in Example 1.

The resulting LED of Example 10 had the same properties as those inExample 7.

Example 11 LED in the Form of a Three Layers Laminated LED

Undoped GaN//Si Doped N-Type GaN//Si Doped GaN

With the same procedures as in Example 7, the first nitridesemiconductor layer 3 is doped with Si to 1×10¹⁷/cm³, the second nitridesemiconductor layer made of GaN 4 is doped with 8×10¹⁸/cm³, and thethird nitride semiconductor layer 5 is an undoped layer. The otherconstructions are the same as in Example 7. In the resulting device, alittle leak current was observed and the output decreased a little.

Example 12 LED in the Form of Three Layers Laminated Structure

Si Doped GaN//Si Doped N-Type GaN//Undoped GaN

With the same procedures as in Example 7, the third nitridesemiconductor layer 5 is doped with Si to 1×10¹⁷/cm³, the second nitridesemiconductor layer made of GaN 4 is doped with 8×10¹⁸/cm³, and thefirst nitride semiconductor layer 5 is an undoped layer. The otherconstructions are the same as in Example 7. In the resulting device, alittle leak current was observed and the output decreased a little.

Example 13 LED in the Form of Three Layer Laminated Structure

Si Doped GaN//Si Doped N-Type GaN//Si Doped GaN

With the same procedures as in Example 7, the first and third nitridesemiconductor layers 3 and 5 are doped with Si to 8×10¹⁶/cm³, and thesecond nitride semiconductor layer made of GaN 4 is doped with5×10¹⁸/cm³. The other constructions are the same as in Example 7. In theresulting device, almost no leak current was observed and the outputdecreased a little.

Example 14 LED in the Form of Super Lattice Three Layers LaminatedStructure

Undoped GaN/Si Doped GaN//Si Doped GaN//Undoped GaN

With the same procedures as in Example 1, the buffer layer 2 is formedand then, the first nitride semiconductor layer 3 made of undoped GaN isgrown to the thickness of 1.5 μm on the same conditions as in Example 1.

Next, at 1050° C., using TMG, ammonia gas and Si gas, the second nitridesemiconductor layer 4 is formed by growing Si doped GaN layer which isdoped with Si to 1×10¹⁹/cm³ to the thickness of 25 μm.

Subsequently, at 1050° C., using TMG and ammonia gas, an undoped GaNlayer is grown to the thickness of 75 μm. At the same temperature, usingTMG, ammonia gas and Si gas, a Si doped GaN layer which is doped with Sito 1×10¹⁹/cm³ to the thickness of 25 Å. Thus, the third nitridesemiconductor layer is formed by laminating alternately an undoped GaNlayer having a thickness of 75 Å and the Si doped GaN layer having athickness of 25 Å, thereby forming the super lattice structure having atotal thickness of 600 Å.

The otter constructions are the same as in Example 1.

The resulting LED in the form of the super lattice structure accordingto the Example 14 had similar properties to those in Example 7.

While the invention has been described in connection with what ispresently considered to be the most practical and preferred embodiment,it is to be understood that the invention is not to be limited to thedisclosed embodiment, but on the contrary, is intended to cover variousmodifications and equivalent arrangements included within the spirit andscope of the appended claims.

What is claimed:
 1. A nitride semiconductor light emitting devicecomprising: at least a substrate; a buffer layer formed on saidsubstrate; an n-type contact layer doped with an n-type impurity forforming an n-electrode; an active layer where electrons and holes arerecombined; and a p-type contact layer for forming a p-electrode, eachlayer being made of nitride semiconductor, wherein said n-type contactlayer has a first surface on which a first undoped nitride semiconductorlayer is formed and a second surface on which a second undoped nitridesemiconductor layer is formed to make a three-layer laminated structure,said three-layer laminated structure being situated between said bufferlayer and said active layer.
 2. A nitride semiconductor light emittingdevice according to claim 1, wherein the second undoped nitridesemiconductor layer has a thickness of more than 10 nm.
 3. A nitridesemiconductor light emitting device according to claim 1, wherein saidn-type contact layer is formed of GaN doped with Si as an n-typeimpurity, and said first undoped nitride semiconductor layer joined tothe first surface of said n-type contact layer is formed of GaN or AlGaNwhile said second undoped nitride semiconductor layer joined to thesecond surface of said n-type contact layer is formed of one of GaN,AlGaN and InGaN.
 4. A nitride semiconductor light emitting deviceaccording to claim 3, wherein said n-type contact layer has a carrierdensity of more than 3×10¹⁸/cm³.
 5. A nitride semiconductor lightemitting device according to claim 3, wherein said n-type contact layerhas a resistivity of less than 8×10⁻³ ohm cm.
 6. A nitride semiconductorlight emitting device according to claim 4, wherein said n-type contactlayer has a resistivity of less than 8×10⁻³ ohm cm.
 7. A nitridesemiconductor light emitting device according to claim 1, wherein saidn-type contact layer has a super-lattice structure with a laminate of atleast a nitride semiconductor layer (B layer) doped with an n-typeimpurity and an undoped nitride semiconductor layer(A layer).
 8. Anitride semiconductor light emitting device according to claim 7,wherein said n-type contact layer has a super-lattice structure of alaminate formed of a combination of nitride semiconductor layersselected from the group consisting of GaN/GaN, InGaN/GaN, AlGaN/GaN andInGaN/AlGaN and either one of which is doped with Si as an n-impurity.9. A nitride semiconductor light emitting device according to claim 8,wherein said n-type contact layer has a carrier density of more than3×10¹⁸/cm³.
 10. A nitride semiconductor light emitting device accordingto claim 8, wherein said n-type contact layer has a resistivity of lessthan 8×10⁻³ ohm cm.
 11. A nitride semiconductor light emitting deviceaccording to claim 9, wherein said n-type contact layer has aresistivity of less than 8×10⁻³ ohm cm.